Keep it smooth - Small-angle X-ray scattering at grazing incidence for thin-film analysis
GISAXS (short for grazing-incidence small-angle X-ray scattering) has developed into an important tool to study nanostructured surfaces and thin films. Soft materials have been of particular interest as many of them can be solution-processed and self-organized on a nanometer length scale. Well-known examples are conjugated polymers and molecules for organic electronics (typical d-spacings from 1 nm to 10 nm), lipids (3 nm to 30 nm), nanoparticles (3 nm to 30 nm), as well as block copolymers (10 nm to 100 nm). Such systems are of interest to use with industrial coating and printing techniques for flexible consumer electronics, medical sensors, and many other applications.
Since X-rays feature total external reflection on the air-to-material interface, their penetration depth into the material is very low when the X-rays impinge under a shallow incidence angle on the sample. Furthermore, changing the incidence angle enables precise tuning of the penetration depth into the sample. Eventually, this enables the detailed study of thin surface films.
The webinar will give you an overview of the GISAXS method and its applications. Furthermore, it will provide an overview of the equipment offered by Anton Paar.
You will get insights into:
- Basics and physical principles of grazing-incidence X-ray scattering
- Typical components used in GISAXS experiments
- Basics about data interpretation
- How to optimize experiments
- Application examples
- Anyone interested in the characterization of thin surface films
- Anyone wondering how GISAXS enables thin film characterization
- Anyone who wants to optimize thin film formation
Dr. Armin Moser obtained his PhD in Technical Physics from Graz University of Technology, with a focus in crystal structure solution of surface induced crystallographic phases. After his PhD studies, he joined Anton Paar in March 2012 and is currently part of the product competence team for small-angle X-ray scattering.