Chemical Mechanical Polishing / Planarization: Slurry Measurements
Relevant for the semiconductor industry
Chemical mechanical planarization (CMP)
Chemical mechanical planarization (CMP) is a critical production step during microcircuit manufacturing. The smaller the electronic components the more sophisticated the CMP process. The customer goal is to have flat, smooth, polished wafers.
Figure: Sketch of a polishing machine
The polishing procedure is performed in clean rooms where the air contains less than one dust particle per cubic meter. Slurry containing mainly pure water, a chemical reagent and different polishing particles are used between the polishing pad and the wafer. A dynamic measurement of the slurry properties coupled with defined control limits can be used to determine a slurry “health”.
Inline monitor with L-Dens 7400
The inline monitor from Anton Paar, equipped with the density sensor L-Dens 7400, continuously monitors and displays the actual density and actual temperature of the slurry.
- Provision of real-time data to indicate slurry health
- Detection of changes in abrasive concentration
- Identification of each slurry type with an ideals(target) density value in case different slurries are used
Specifications of L-Dens 7400 SST
Measuring range: max. 3 g/cm3
Process temperature: -40 °C to 125 °C
Ambient temp. range:
-40 to +70 °C (65 °C)
Process pressure: max. 50 bar (abs.)
Typical repeatability: 0.02 kg/m³
Do you have any questions?
Contact Anton Paar directly: process[at]anton-paar.com