Investigation of Synthesis Parameters on Growth of Semiconducting Nanoparticles

Synthesis and In-situ XRD Study with the XRK 900 Reactor Chamber.

Nanoparticles have attracted considerable interest within the last years. This can be mainly attributed to their tunable, size-dependent optical and optoelectronic properties.

Zinc sulfide (ZnS) and zinc oxide (ZnO), both belonging to the group of II-IV semiconductors, with a band gap energy of 3.66 and 3.2 eV are highly investigated materials. This is due to the many possible applications that arise in fields like solar cells, infrared windows, lasers, displays and sensors. Various synthesis methods for both materials have been developed. However, in terms of a low-cost and less time consuming synthesis procedure there is still a need for additional research.

This report describes an already established synthesis procedure with zinc acetate (Zn(OAc)2) and thioacetamide as precursors for ZnS nanoparticles (1). These particles can easily be oxidized to ZnO nanoparticles by applying a temperature of 600 °C in air.

The formation of ZnS was investigated by in-situ XRD performed with the XRK 900 Reactor Chamber of Anton Paar. Additional information about the influence of temperature, temperature ramp and waiting time on the size of the resulting nanoparticles is obtained. Also the time needed for a complete oxidation to ZnO nanoparticles was investigated.



1. Lu, H.-Y.; Chu, S.-Y.; Tan, S.-S. Journal of Crystal Growth (2004), 269, 385-391

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